CW OSCILLATION CHARACTERISTICS OF GAAS SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTORS

被引：8

作者：

MAEDA, M ^{[1
]}

TAKAHASHI, S ^{[1
]}

KODERA, H ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN

来源：

PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 02期

关键词：

D O I：

10.1109/PROC.1975.9740

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：320 / 321

页数：2

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