CW OSCILLATION CHARACTERISTICS OF GAAS SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTORS

被引：8
|
作者：
MAEDA, M [1 ]
TAKAHASHI, S [1 ]
KODERA, H [1 ]
机构：
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
来源：
PROCEEDINGS OF THE IEEE | 1975年 / 63卷 / 02期
关键词：
D O I：
10.1109/PROC.1975.9740
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：320 / 321
页数：2
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