首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
CW OSCILLATION CHARACTERISTICS OF GAAS SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTORS
被引:8
|
作者
:
MAEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
MAEDA, M
[
1
]
TAKAHASHI, S
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
TAKAHASHI, S
[
1
]
KODERA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
KODERA, H
[
1
]
机构
:
[1]
HITACHI LTD,CENT RES LAB,KOKUBUNJI 185,TOKYO,JAPAN
来源
:
PROCEEDINGS OF THE IEEE
|
1975年
/ 63卷
/ 02期
关键词
:
D O I
:
10.1109/PROC.1975.9740
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:320 / 321
页数:2
相关论文
共 50 条
[1]
SI AND GAAS 0.5 MUM-GATE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
BAECHTOLD, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
BAECHTOLD, W
DAETWYLE.K
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
DAETWYLE.K
FORSTER, T
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
FORSTER, T
MOHR, TO
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
MOHR, TO
WALTER, W
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
WALTER, W
WOLF, P
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
IBM CORP, ZURICH RES LAB, RUSCHLIKON 8803, SWITZERLAND
WOLF, P
ELECTRONICS LETTERS,
1973,
9
(10)
: 232
-
234
[2]
ORIENTATION EFFECT ON PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
LEE, CP
论文数:
0
引用数:
0
h-index:
0
LEE, CP
ZUCCA, R
论文数:
0
引用数:
0
h-index:
0
ZUCCA, R
WELCH, BM
论文数:
0
引用数:
0
h-index:
0
WELCH, BM
APPLIED PHYSICS LETTERS,
1980,
37
(03)
: 311
-
313
[3]
CHARACTERISTICS AND MECHANISM OF 1/F NOISE IN GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
FOLKES, PA
论文数:
0
引用数:
0
h-index:
0
FOLKES, PA
APPLIED PHYSICS LETTERS,
1986,
48
(05)
: 344
-
346
[4]
SILICON AND GALLIUM ARSENIDE FIELD-EFFECT TRANSISTORS WITH SCHOTTKY-BARRIER GATE
STATZ, H
论文数:
0
引用数:
0
h-index:
0
STATZ, H
VONMUNCH, W
论文数:
0
引用数:
0
h-index:
0
VONMUNCH, W
SOLID-STATE ELECTRONICS,
1969,
12
(02)
: 111
-
&
[5]
NONLOCAL AND DIFFUSION EFFECTS IN SUBMICRON SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTORS
KALFA, AA
论文数:
0
引用数:
0
h-index:
0
KALFA, AA
PASHKOVSKIJ, AB
论文数:
0
引用数:
0
h-index:
0
PASHKOVSKIJ, AB
TAGER, AS
论文数:
0
引用数:
0
h-index:
0
TAGER, AS
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOFIZIKA,
1985,
28
(12):
: 1583
-
1589
[6]
PREFERENTIAL DIFFUSION AND ORIENTATION EFFECTS OF SCHOTTKY-BARRIER GAAS FIELD-EFFECT TRANSISTORS
MCLAUGHLIN, KL
论文数:
0
引用数:
0
h-index:
0
MCLAUGHLIN, KL
BIRRITTELLA, MS
论文数:
0
引用数:
0
h-index:
0
BIRRITTELLA, MS
APPLIED PHYSICS LETTERS,
1984,
44
(02)
: 252
-
254
[7]
MICROWAVE PROPERTIES OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
WOLF, P
论文数:
0
引用数:
0
h-index:
0
WOLF, P
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1970,
14
(02)
: 125
-
+
[8]
DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS
DRANGEID, KE
论文数:
0
引用数:
0
h-index:
0
DRANGEID, KE
SOMMERHA.R
论文数:
0
引用数:
0
h-index:
0
SOMMERHA.R
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1970,
14
(02)
: 82
-
&
[9]
SHAPER-AMPLIFIERS IMPLEMENTED BY GAAS SCHOTTKY-BARRIER FIELD-EFFECT POWER TRANSISTORS
ADAMOV, PG
论文数:
0
引用数:
0
h-index:
0
ADAMOV, PG
SMERDOV, VY
论文数:
0
引用数:
0
h-index:
0
SMERDOV, VY
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES,
1985,
28
(05)
: 1112
-
1114
[10]
MAGNETOPHONON EFFECT IN GAAS SCHOTTKY GATE FIELD-EFFECT TRANSISTORS
JUDD, TPC
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
JUDD, TPC
PEPPER, M
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
PEPPER, M
HILL, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV SHEFFIELD,DEPT ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
UNIV SHEFFIELD,DEPT ELECT ENGN,SHEFFIELD S10 2TN,S YORKSHIRE,ENGLAND
HILL, G
APPLIED PHYSICS LETTERS,
1988,
53
(01)
: 54
-
56
←
1
2
3
4
5
→