HIGH-POWER, NEAR-DIFFRACTION-LIMITED LARGE-AREA TRAVELING-WAVE SEMICONDUCTOR AMPLIFIERS

被引：58

作者：

GOLDBERG, L ^{[1
]}

MEHUYS, D ^{[1
]}

SURETTE, MR ^{[1
]}

HALL, DC ^{[1
]}

机构：

[1] SPECTRA DIODE LABS,SAN JOSE,CA 95134

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期

关键词：

D O I：

10.1109/3.234466

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Operating characteristics of high-power large-active-area GaAlAs amplifiers configured in double-pass and single-pass traveling-wave arrangements are described. Single-pass broad-area amplifiers with a 600 mum stripe width generated up to 21 W of near diffraction-limited emission under pulsed operation when injected with 500 mW from a Ti:Al2O3 laser, and 11.6 W when injected with 100 mW from a laser diode master laser. In CW operation, a broad-area amplifier output of 3.3 W was demonstrated. Tapered-stripe large-area amplifiers emitted up to 4.5 W CW in a near diffraction-limited beam when injected with 150 mW from a Ti:Al2O3 laser. The physical mechanisms causing degradation of the output beam phase front and intensity uniformity at high output power levels, including thermal lensing and filamentation, are presented.

引用

页码：2028 / 2043

页数：16

共 34 条

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