DEFECT PRODUCTION AND LIFETIME CONTROL IN ELECTRON AND GAMMA-IRRADIATED SILICON

被引：304
作者：
BROTHERTON, SD
BRADLEY, P
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 08期
关键词：
D O I：
10.1063/1.331460
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5720 / 5732
页数：13
相关论文
共 33 条
[1]   EFFECTIVE RECOMBINATION LEVELS IN N-TYPE AND P-TYPE SILICON IRRADIATED BY 4.5 MEV ELECTRONS [J].
BIELLEDASPET, D .
SOLID-STATE ELECTRONICS, 1973, 16 (10) :1103-1123
[2]   A COMPARISON OF THE PERFORMANCE OF GOLD AND PLATINUM KILLED POWER DIODES [J].
BROTHERTON, SD ;
BRADLEY, P .
SOLID-STATE ELECTRONICS, 1982, 25 (02) :119-125
[3]   ELECTRON-CAPTURE CROSS-SECTION AND ENERGY-LEVEL OF GOLD ACCEPTOR CENTER IN SILICON [J].
BROTHERTON, SD ;
BICKNELL, J .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (02) :667-671
[4]   ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON [J].
BROTHERTON, SD ;
BRADLEY, P ;
BICKNELL, J .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403
[5]   THE ELECTRICAL-PROPERTIES OF SULFUR IN SILICON [J].
BROTHERTON, SD ;
KING, MJ ;
PARKER, GJ .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) :4649-4658
[6]  
BROTHERTON SD, 1981, SEMICONDUCTOR SILICO, P779
[7]   LIFETIME CONTROL IN SILICON POWER DEVICES BY ELECTRON OR GAMMA-IRRADIATION [J].
CARLSON, RO ;
SUN, YS ;
ASSALIT, HB .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (08) :1103-1108
[8]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
[9]   DEFECTS IN IRRADIATED SILICON .2. INFRARED ABSSORPTION OF SI-A CENTER [J].
CORBETT, JW ;
WATKINS, GD ;
CHRENKO, RM ;
MCDONALD, RS .
PHYSICAL REVIEW, 1961, 121 (04) :1015-&
[10]  
Crank J., 1995, MATH DIFFUSION
1234