THE APPLICATION OF THE MODIFIED GOUY-CHAPMAN THEORY TO AN ELECTRICAL DOUBLE-LAYER CONTAINING ASYMMETRIC IONS

被引：63

作者：

BHUIYAN, LB

BLUM, L

HENDERSON, D

机构：

[1] IBM CORP,RES LAB,SAN JOSE,CA 95193

[2] UNIV PUERTO RICO,DEPT PHYS,RIO PIEDRAS,PR 00931

来源：

JOURNAL OF CHEMICAL PHYSICS | 1983年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.444523

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：442 / 445

页数：4

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