VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P/GAP LIGHT-EMITTING-DIODES

被引：235

作者：

KISH, FA ^{[1
]}

STERANKA, FM ^{[1
]}

DEFEVERE, DC ^{[1
]}

VANDERWATER, DA ^{[1
]}

PARK, KG ^{[1
]}

KUO, CP ^{[1
]}

OSENTOWSKI, TD ^{[1
]}

PEANASKY, MJ ^{[1
]}

YU, JG ^{[1
]}

FLETCHER, RM ^{[1
]}

STEIGERWALD, DA ^{[1
]}

CRAFORD, MG ^{[1
]}

ROBBINS, VM ^{[1
]}

机构：

[1] HEWLETT PACKARD CORP,PALO ALTO,CA 94303

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

Light emitting diodes;

D O I：

10.1063/1.111442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating the operation of transparent-substrate (TS) (AlxGa1-x)0.5In0.5P/GaP light-emitting diodes (LEDs) whose efficiency exceeds that afforded by all other current LED technologies in the green to red (560-630 nm) spectral regime. A maximum luminous efficiency of 41.5 lm/W (93.2 lm/A) is realized at lambda approximately 604 nm (20 mA, direct current). The TS (AlxGa1-x)0.5In0.5P/GaP LEDs are fabricated by selectively removing the absorbing n-type GaAs substrate of a p-n (AlxGa1-x)0.5In0.5P double heterostructure LED and wafer bonding a ''transparent'' n-GaP substrate in its place. The resulting TS (AlxGa1-x)0.5In0.5P/GaP LED lamps exhibit a twofold improvement in light output compared to absorbing-substrate (AS) (AlxGa1-x)0.5In0.5P/GaAs lamps.

引用

页码：2839 / 2841

页数：3

共 9 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)GAAS [J].