PREPARATION OF ALUMINUM NITRIDE THIN-FILMS BY REACTIVE SPUTTERING AND THEIR APPLICATIONS TO GHZ-BAND SURFACE-ACOUSTIC-WAVE DEVICES

被引：119

作者：

OKANO, H

TANAKA, N

TAKAHASHI, Y

TANAKA, T

SHIBATA, K

NAKANO, S

机构：

[1] Functional Materials Research Center, Sanyo Electric Co., Ltd., 1-18-13, Hashiridani, Hirakata, Osaka

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 02期

关键词：

D O I：

10.1063/1.111553

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single crystal aluminum nitride (ALN) thin films were prepared by a low-temperature reactive sputtering on basal plane sapphire [(001)Al2O3] at a substrate temperature of less than 315 degrees C. Surface acoustic wave (SAW) characteristics with an interdigital transducer /(001)AlN/(001)Al2O3 structure were investigated. The phase velocity and temperature coefficient of delay time are 5750-5765 m/s and 55-63 ppm/degrees C at KH=1.2-1.6, respectively. Resonator-type 1-GHz-band SAW filters with its structure were fabricated. The insertion loss and suppression were 23 dB and more than 20 dB, respectively.

引用

页码：166 / 168

页数：3

共 13 条

[1] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND X-RAY STUDIES OF A1N FILMS GROWN ON SI(111) AND SI(001) BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J].