SIMULATION OF X-RAY-DIFFRACTION FOR SUPERLATTICES WITH FLUCTUATIONS FROM PERFECT PERIODICITY

被引:5
作者
XIU, LS
WU, ZQ
机构
[1] Fundamental Physics Center, University of Science and Technology of China
关键词
D O I
10.1063/1.350635
中图分类号
O59 [应用物理学];
学科分类号
摘要
An investigation on the effects of the disorder of superlattice periods on x-ray-diffraction patterns is reported. Three kinds of disorder (random fluctuations, systematic deviations, and local deviations) have been considered. The results of the simulations show that their effects are quite different. The systematic deviation widens the superlattice peaks and shifts the positions of the low-angle superlattice peaks. The effect of the systematic deviation on the reduction of peak intensity is more serious than that of random fluctuation. The local deviation makes the superlattice peak weaker and wider or splits it into double peaks. These three kinds of disorder can be distinguished.
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页码:4892 / 4896
页数:5
相关论文
共 19 条
[1]   X-RAY-DIFFRACTION STUDY OF INTENTIONALLY DISORDERED GAALAS-GAAS SUPERLATTICES [J].
AUVRAY, P ;
BAUDET, M ;
REGRENY, A .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :456-460
[2]   DOUBLE-CRYSTAL X-RAY-DIFFRACTION FROM SI1-XGEX/SI SUPERLATTICES - QUANTIFICATION OF PEAK BROADENING EFFECTS [J].
BARNETT, SJ ;
BROWN, GT ;
HOUGHTON, DC ;
BARIBEAU, JM .
APPLIED PHYSICS LETTERS, 1989, 54 (18) :1781-1783
[3]  
CARBON M, 1989, SUPERLATTICE MICROST, V5, P27
[4]   EFFECT OF LAYER-THICKNESS FLUCTUATIONS ON SUPERLATTICE DIFFRACTION [J].
CLEMENS, BM ;
GAY, JG .
PHYSICAL REVIEW B, 1987, 35 (17) :9337-9340
[5]  
COMPTON AH, 1946, XRAYS THEORY EXPT
[7]   X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS [J].
FLEMING, RM ;
MCWHAN, DB ;
GOSSARD, AC ;
WIEGMANN, W ;
LOGAN, RA .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :357-363
[8]   X-RAY-DIFFRACTION OF MULTILAYERS WITH A SYSTEMATIC DEVIATION OF PERIOD [J].
GAO, C ;
JIANG, ZM ;
WU, ZG .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) :874-875
[9]   THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J].
HALLIWELL, MAG ;
LYONS, MH ;
HILL, MJ .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :523-531
[10]  
HILL MJ, 1985, MATER RES SOC S P, V37, P53