ANALYSIS OF THE DECAY OF PICOSECOND FLUORESCENCE IN SEMICONDUCTORS - CRITERIA FOR THE PRESUMPTION OF ELECTRONEUTRALITY DURING THE DECAY OF AN EXPONENTIAL ELECTRON-HOLE PROFILE

被引：12

作者：

FELDBERG, SW ^{[1
]}

EVENOR, M ^{[1
]}

HUPPERT, D ^{[1
]}

GOTTESFELD, S ^{[1
]}

机构：

[1] TEL AVIV UNIV, DEPT CHEM, IL-69978 TEL AVIV, ISRAEL

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1985年 / 185卷 / 02期

关键词：

D O I：

10.1016/0368-1874(85)80130-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：209 / 228

页数：20

共 12 条

[1]

AGMON P, 1980, THESIS CALTECH

[2]

BARD AJ, 1980, ELECTROCHEMICAL METH, P695

[3]

BRUMLEVE TR, 1978, J ELECTROANAL CHEM, V90, P1, DOI 10.1016/S0022-0728(78)80137-5

[4] TIME-RESOLVED PHOTOLUMINESCENCE IN THE PICOSECOND TIME DOMAIN FROM CDS CRYSTALS IMMERSED IN ELECTROLYTES [J].

EVENOR, M ;

GOTTESFELD, S ;

HARZION, Z ;

HUPPERT, D ;

FELDBERG, SW .

JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (25) :6213-6218

[5] OPTIMIZATION OF EXPLICIT FINITE-DIFFERENCE SIMULATION OF ELECTROCHEMICAL PHENOMENA UTILIZING AN EXPONENTIALLY EXPANDED SPACE GRID - REFINEMENT OF THE JOSLIN-PLETCHER ALGORITHM [J].

FELDBERG, SW .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1981, 127 (1-3) :1-10

[6] TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON [J].

SHANK, CV ;

YEN, R ;

HIRLIMANN, C .

PHYSICAL REVIEW LETTERS, 1983, 50 (06) :454-457

[7] FEMTOSECOND-TIME-RESOLVED SURFACE STRUCTURAL DYNAMICS OF OPTICALLY-EXCITED SILICON [J].

SHANK, CV ;

YEN, R ;

HIRLIMANN, C .

PHYSICAL REVIEW LETTERS, 1983, 51 (10) :900-902

[8]

SHANK CV, 1983, LASER FOCUS WORLD, V19, P59

[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[10]

SZE SM, 1981, PHYS SEMICONDUCTOR D, P850

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