DOUBLE ZINC DIFFUSION FRONTS IN INP - CORRELATION WITH MODELS OF VARYING CHARGE-TRANSFER DURING INTERSTITIAL-SUBSTITUTIONAL INTERCHANGE

被引:25
作者
KAZMIERSKI, K
DECREMOUX, B
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 02期
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D O I
10.1143/JJAP.24.239
中图分类号
O59 [应用物理学];
学科分类号
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页码:239 / 242
页数:4
相关论文
共 15 条
[1]   LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES [J].
ANDO, H ;
SUSA, N ;
KANBE, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1408-1413
[2]   DIFFUSION OF CD IN INP AND IN0.53GA0.47AS [J].
AYTAC, S ;
SCHLACHETZKI, A .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :169-173
[3]   DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODES [J].
AYTAC, S ;
SCHLACHETZKI, A .
SOLID-STATE ELECTRONICS, 1982, 25 (11) :1135-&
[4]   DIFFUSION OF CD AND ZN IN INP BETWEEN 550 AND 650-DEGREES-C [J].
CHAND, N ;
HOUSTON, PA .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :37-52
[5]   ANOMALOUS IMPURITY DIFFUSION IN III-V COMPOUNDS - THE CONSEQUENCE OF SELF-INDUCED FIELD EFFECTS [J].
HILDEBRAND, O .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 72 (02) :575-584
[6]   ON MODELS OF PHOSPHORUS DIFFUSION IN SILICON [J].
HU, SM ;
FAHEY, P ;
DUTTON, RW .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6912-6922
[7]   THE TEMPERATURE-DEPENDENT DIFFUSION MECHANISM OF ZN IN INP USING THE SEMICLOSED DIFFUSION METHOD [J].
KAZMIERSKI, K ;
HUBER, AM ;
MORILLOT, G ;
DECREMOUX, B .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (05) :628-633
[8]   DIFFUSION PROPERTIES OF CADMIUM IN INDIUM-ANTIMONIDE [J].
KOLODNY, A ;
SHAPPIR, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (09) :1530-1534
[9]  
KUEBART W, 1982, INT S GAAS RELATED C
[10]   DIFFUSION PROFILES OF CD IN INP [J].
OHTSUKA, K ;
NISHINO, T ;
HAMAKAWA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (08) :1170-1173