首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
CHARGE AND INTERFACE STATE GENERATION IN FIELD OXIDES
被引:46
作者
:
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
BOESCH, HE
TAYLOR, TL
论文数:
0
引用数:
0
h-index:
0
TAYLOR, TL
机构
:
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1984年
/ 31卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1984.4333495
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1273 / 1279
页数:7
相关论文
共 15 条
[1]
ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
[J].
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
AUSMAN, GA
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
MCLEAN, FB
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:173
-175
[2]
BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446
[3]
CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
BOESCH, HE
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
MCGARRITY, JM
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
:1520
-1525
[4]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
[J].
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
;
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
.
APPLIED PHYSICS LETTERS,
1966,
8
(02)
:31
-&
[5]
GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS
[J].
KNOLL, M
论文数:
0
引用数:
0
h-index:
0
KNOLL, M
;
BRAUNIG, D
论文数:
0
引用数:
0
h-index:
0
BRAUNIG, D
;
FAHRNER, WR
论文数:
0
引用数:
0
h-index:
0
FAHRNER, WR
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1982,
29
(06)
:1471
-1478
[6]
A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
[J].
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
:1651
-1657
[7]
COMPARISON OF CO-60 RESPONSE AND 10 KEV X-RAY RESPONSE IN MOS CAPACITORS
[J].
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
OLDHAM, TR
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
:4377
-4381
[8]
TOTAL DOSE EFFECTS IN RECESSED OXIDE DIGITAL BIPOLAR MICROCIRCUITS
[J].
PEASE, RL
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
PEASE, RL
;
TURFLER, RM
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
TURFLER, RM
;
PLATTETER, D
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
PLATTETER, D
;
EMILY, D
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
EMILY, D
;
BLICE, R
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
BLICE, R
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
:4216
-4223
[9]
MOS HARDENING APPROACHES FOR LOW-TEMPERATURE APPLICATIONS
[J].
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
SROUR, JR
;
CHIU, KY
论文数:
0
引用数:
0
h-index:
0
CHIU, KY
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2140
-2146
[10]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
[J].
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:285
-299
←
1
2
→
共 15 条
[1]
ELECTRON-HOLE PAIR CREATION ENERGY IN SIO2
[J].
AUSMAN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
AUSMAN, GA
;
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS,WASHINGTON,DC 20438
HARRY DIAMOND LABS,WASHINGTON,DC 20438
MCLEAN, FB
.
APPLIED PHYSICS LETTERS,
1975,
26
(04)
:173
-175
[2]
BOESCH HE, 1982, IEEE T NUCL SCI, V29, P1446
[3]
CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K
[J].
BOESCH, HE
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
BOESCH, HE
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
HARRY DIAMOND LABS, ADELPHI, MD 20783 USA
MCGARRITY, JM
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1976,
23
(06)
:1520
-1525
[4]
DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E)
[J].
GRAY, PV
论文数:
0
引用数:
0
h-index:
0
GRAY, PV
;
BROWN, DM
论文数:
0
引用数:
0
h-index:
0
BROWN, DM
.
APPLIED PHYSICS LETTERS,
1966,
8
(02)
:31
-&
[5]
GENERATION OF OXIDE CHARGE AND INTERFACE STATES BY IONIZING-RADIATION AND BY TUNNEL INJECTION EXPERIMENTS
[J].
KNOLL, M
论文数:
0
引用数:
0
h-index:
0
KNOLL, M
;
BRAUNIG, D
论文数:
0
引用数:
0
h-index:
0
BRAUNIG, D
;
FAHRNER, WR
论文数:
0
引用数:
0
h-index:
0
FAHRNER, WR
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1982,
29
(06)
:1471
-1478
[6]
A FRAMEWORK FOR UNDERSTANDING RADIATION-INDUCED INTERFACE STATES IN SIO2 MOS STRUCTURES
[J].
MCLEAN, FB
论文数:
0
引用数:
0
h-index:
0
MCLEAN, FB
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1980,
27
(06)
:1651
-1657
[7]
COMPARISON OF CO-60 RESPONSE AND 10 KEV X-RAY RESPONSE IN MOS CAPACITORS
[J].
OLDHAM, TR
论文数:
0
引用数:
0
h-index:
0
OLDHAM, TR
;
MCGARRITY, JM
论文数:
0
引用数:
0
h-index:
0
MCGARRITY, JM
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
:4377
-4381
[8]
TOTAL DOSE EFFECTS IN RECESSED OXIDE DIGITAL BIPOLAR MICROCIRCUITS
[J].
PEASE, RL
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
PEASE, RL
;
TURFLER, RM
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
TURFLER, RM
;
PLATTETER, D
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
PLATTETER, D
;
EMILY, D
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
EMILY, D
;
BLICE, R
论文数:
0
引用数:
0
h-index:
0
机构:
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
NAVAL WEAP SUPPORT CTR,CRANE,IN 47522
BLICE, R
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1983,
30
(06)
:4216
-4223
[9]
MOS HARDENING APPROACHES FOR LOW-TEMPERATURE APPLICATIONS
[J].
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
SROUR, JR
;
CHIU, KY
论文数:
0
引用数:
0
h-index:
0
CHIU, KY
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1977,
24
(06)
:2140
-2146
[10]
AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
[J].
TERMAN, LM
论文数:
0
引用数:
0
h-index:
0
TERMAN, LM
.
SOLID-STATE ELECTRONICS,
1962,
5
(SEP-O)
:285
-299
←
1
2
→