STABLE AND UNSTABLE SURFACE-STATE CHARGE IN THERMALLY OXIDIZED SILICON

被引：16

作者：

BREED, DJ ^{[1
]}

KRAMER, RP ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 11期

关键词：

D O I：

10.1016/0038-1101(76)90100-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：897 / 907

页数：11

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[9] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J].

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