ELECTRICAL PROPERTIES AND STRUCTURE OF BORON IMPLANTED GERMANIUM

被引：9

作者：

GUSEV, VM ^{[1
]}

GUSEVA, MI ^{[1
]}

IONOVA, ES ^{[1
]}

MANSUROVA, AN ^{[1
]}

STARININ, CV ^{[1
]}

机构：

[1] IV KURCHATOV ATOM ENERGY INST, MOSCOW, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 21卷 / 02期

关键词：

D O I：

10.1002/pssa.2210210203

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：413 / 418

页数：6

共 8 条

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BRIDGERS, HE
KOLB, ED
[J]. JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (04) : 648 - 650
[2] FISTUL VI, 1967, SILNO LEGIROVANNIE P
[3] GUSEV VM, 1973, FIZ TEKH POLUPROV, V7, P2153
[4] GUSEV VM, 1967, PRIB TEKH EKSP, V4, P19
[5] GUSEVA MI, 1973, RADIATION EFFECTS, V18
[6] ITON I, 1971, JPN J APPL PHYS, V10, P1002
[7] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS
MAYER, JW
MARSH, OJ
SHIFRIN, GA
BARON, R
[J]. CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) : 4073 - &
[8] PAVLOV PV, 1966, FIZ TVERD TELA+, V7, P1776