GAAS-MESFET MODELING AND NONLINEAR CAD

被引：68
作者：
CURTICE, WR
机构：
[1] Microwave Semiconductor Corp,, Somerset, NJ, USA, Microwave Semiconductor Corp, Somerset, NJ, USA
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1988年 / 36卷 / 02期
关键词：
Manuscript received April 2; 1987; revised August 31; 1987. This work was done while the author was with the Microwave Technology Center; RCA Laboratories. Princeton; NJ; and was sponsored by the Air Force Wright Aeronautical Laboratories; Avionic Laboratory; WPAFB; OH; under Contract F33615-85-(2-1767;
D O I：
10.1109/22.3509
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
24
引用
收藏
页码：220 / 230
页数：11
相关论文
共 24 条
[1]   LAUNCHER AND MICROSTRIP CHARACTERIZATION [J].
BIANCO, B ;
PARODI, M ;
RIDELLA, S ;
SELVAGGI, F .
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1976, 25 (04) :320-323
[2]   NUMERICAL STEADY-STATE ANALYSIS OF NON-LINEAR MICROWAVE CIRCUITS WITH PERIODIC EXCITATION [J].
CAMACHOPENALOSA, C .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1983, 31 (09) :724-730
[3]   A MESFET MODEL FOR USE IN THE DESIGN OF GAAS INTEGRATED-CIRCUITS [J].
CURTICE, WR .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1980, 28 (05) :448-456
[4]   A NONLINEAR GAAS-FET MODEL FOR USE IN THE DESIGN OF OUTPUT CIRCUITS FOR POWER-AMPLIFIERS [J].
CURTICE, WR ;
ETTENBERG, M .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1985, 33 (12) :1383-1394
[5]   SELF-CONSISTENT GAAS-FET MODELS FOR AMPLIFIER DESIGN AND DEVICE DIAGNOSTICS [J].
CURTICE, WR ;
CAMISA, RL .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1984, 32 (12) :1573-1579
[6]   THE PERFORMANCE OF SUBMICROMETER GATE LENGTH GAAS-MESFETS [J].
CURTICE, WR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) :1693-1699
[7]   A TEMPERATURE MODEL FOR THE GAAS-MESFET [J].
CURTICE, WR ;
YUN, YH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :954-962
[8]  
DAVIS C, 1975, RCA ENG, V21, P66
[9]  
DIAMOND F, 1982, 12TH P EUR MICR C FI
[10]  
FUKUI H, 1979, BELL SYST TECH J, V58
123