USE OF COBALT SILICIDE IN VLSI

被引：0
|
作者：
LUCCHESE, CJ [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C326 / C326
页数：1
相关论文
共 50 条
  • [1] PREPARATION AND CHARACTERIZATION OF ULTRA-THIN COBALT SILICIDE FOR VLSI APPLICATIONS
    KAL, S
    KASKO, I
    RYSSEL, H
    BULLETIN OF MATERIALS SCIENCE, 1995, 18 (05) : 531 - 539
  • [2] OMCVD OF COBALT AND COBALT SILICIDE
    DORMANS, GJM
    MEEKES, GJBM
    STARING, EGJ
    JOURNAL OF CRYSTAL GROWTH, 1991, 114 (03) : 364 - 372
  • [3] MOLYBDENUM SILICIDE - IS IT SUITABLE FOR INTERCONNECTIONS IN VLSI
    CAPPELLETTI, P
    MORI, F
    PIGNATEL, G
    FERLA, G
    NAVA, F
    OTTAVIANI, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C97 - C97
  • [4] A new cobalt silicide
    Lebeau, P
    COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1901, 132 : 556 - 558
  • [5] Improved self aligned silicide process for VLSI
    Singh, Awatar
    Khokle, W.S.
    Microelectronics Journal, 1989, 20 (04) : 11 - 17
  • [6] CVD TUNGSTEN AND TUNGSTEN SILICIDE FOR VLSI APPLICATIONS.
    Suresh Sachdev
    Castellano, Robert
    Semiconductor International, 1985, 8 (05) : 306 - 310
  • [7] Comparison between a Ti cap cobalt silicide to a flashed Ti-Ti cap cobalt silicide
    Lim, CO
    Jamal, Z
    Aziz, AA
    Hassan, Z
    2002 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, PROCEEDINGS, 2002, : 329 - 332
  • [8] THE INFLUENCE OF IMPURITIES ON COBALT SILICIDE FORMATION
    FREITAS, WJ
    SWART, JW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (10) : 3067 - 3070
  • [9] THE INFLUENCE OF OXYGEN ON COBALT SILICIDE FORMATION
    SWART, HC
    BERNING, GLP
    DUPLESSIS, J
    THIN SOLID FILMS, 1990, 189 (02) : 321 - 327
  • [10] COBALT SILICIDE FORMATION BY ION MIXING
    HAMDI, AH
    NICOLET, MA
    THIN SOLID FILMS, 1984, 119 (04) : 357 - 363
12345