OPTICAL STUDIES OF RESONANT AND NONRESONANT TUNNELING IN GAAS ALXGA1-XAS QUANTUM-WELLS

被引：5

作者：

ISPASOIU, RG

FOX, AM

FOXON, CT

CUNNINGHAM, JE

JAN, WY

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

[2] AT&T BELL LABS,HOLMDEL,NJ 07733

[3] POLYTECH UNIV BUCHAREST,DEPT PHYS,R-77206 BUCHAREST,ROMANIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 05期

关键词：

D O I：

10.1088/0268-1242/9/5S/039

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have used CW photoluminescence and photocurrent spectroscopy to study the vertical transport mechanisms in GaAs/AlxGa1-xAs multiple quantum well p-i-n structures. In an x = 0.33 asymmetric coupled well sample we have observed resonant electron tunnelling through barriers as thick as 153 angstrom above the transition field for spatially indirect recombination. In a superlattice with x = 0.4 we have observed both electron and hole resonant tunnelling. The temperature and intensity dependence of the photocurrent suggest that non-resonant tunnelling is assisted by charged impurity scattering below 100 K.

引用

收藏

页码：545 / 548

页数：4

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