TEMPERATURE-DEPENDENCE OF ELECTRON-BEAM-INDUCED CURRENT IMAGE OF SEMIINSULATING UNDOPED LIQUID-ENCAPSULATED CZOCHRALSKI GAAS

被引：0
|
作者：
TOKUMARU, Y
机构：
[1] Chuo University, Kasuga, Bunkyo-ku, Tokyo
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期
关键词：
EBIC; EBIC CONTRAST; TEMPERATURE DEPENDENCE OF EBIC; SEMIINSULATING GAAS; CELL STRUCTURE;
D O I：
10.1143/JJAP.30.2970
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Semi-insulating undoped liquid-encapsulated Czochralski GaAs was investigated by the electron-beam-induced current method. It is found that defects which cannot be observed at room temperature become visible when the temperature is raised to about 350 K. A simple theoretical consideration on this experimental result was performed.
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页码：2970 / 2971
页数：2
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