ULTRA-SMALL PUNCHTHROUGH MOSFET

被引：0
作者：
GROSSMAN, BM [1 ]
HWANG, W [1 ]
FANG, FF [1 ]
机构：
[1] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027
来源：
SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 12期
关键词：
D O I：
10.1016/0038-1101(84)90047-9
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1083 / 1090
页数：8
相关论文
共 24 条
  • [1] SHORT-CHANNEL MOSFETS IN THE PUNCHTHROUGH CURRENT MODE
    BARNES, JJ
    SHIMOHIGASHI, K
    DUTTON, RW
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 368 - 375
  • [2] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION
    BREWS, JR
    FICHTNER, W
    NICOLLIAN, EH
    SZE, SM
    [J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4
  • [3] FINITE-ELEMENT ANALYSIS OF SEMICONDUCTOR-DEVICES - THE FIELDAY PROGRAM
    BUTURLA, EM
    COTTRELL, PE
    GROSSMAN, BM
    SALSBURG, KA
    [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 218 - 231
  • [4] HOT-ELECTRON EMISSION IN N-CHANNEL IGFETS
    COTTRELL, PE
    TROUTMAN, RR
    NING, TH
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 442 - 455
  • [5] DANG LM, 1980, IEEE T ELECTRON DEV, V27, P1533, DOI 10.1109/T-ED.1980.20067
  • [6] DASCALU D, 1977, ELECTRONIC PROCESSES, P171
  • [7] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
    DENNARD, RH
    GAENSSLEN, FH
    YU, HN
    RIDEOUT, VL
    BASSOUS, E
    LEBLANC, AR
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268
  • [8] TECHNOLOGY CHALLENGES FOR ULTRA-SMALL SILICON MOSFETS
    DENNARD, RH
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 537 - 539
  • [9] MOS DEVICE AND TECHNOLOGY CONSTRAINTS IN VLSI
    ELMANSY, Y
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 567 - 573
  • [10] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES
    FANG, FF
    FOWLER, AB
    [J]. PHYSICAL REVIEW, 1968, 169 (03): : 619 - +
123