VERY LOW-TEMPERATURE (250-DEGREES-C) EPITAXIAL-GROWTH OF SILICON BY GLOW-DISCHARGE OF SILANE

被引：22

作者：

BAERT, K

SYMONS, J

VANDERVORST, W

VANHELLEMONT, J

CAYMAX, M

POORTMANS, J

NIJS, J

MERTENS, R

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 23期

关键词：

D O I：

10.1063/1.98301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1922 / 1924

页数：3

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