Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout

被引：32
作者：
Dachs, C
Roubaud, F
Palau, JM
Bruguier, G
Gasiot, J
Tastet, P
Calvet, MC
Calvel, P
机构：
[1] UNIV ANTILLES GUYANE,IUT,KOUROU 97310,FRENCH GUIANA
[2] CNES,F-31055 TOULOUSE,FRANCE
[3] AEROSPATIALE,F-78133 LES MUREAUX,FRANCE
[4] ALCATEL ESPACE,F-31037 TOULOUSE,FRANCE
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1995年 / 42卷 / 06期
关键词：
D O I：
10.1109/23.489237
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
2D MEDICI simulator is used to investigate hardening solutions to single-event burnout (SEE). SEE parametric dependencies such as carrier lifetime reduction, base enlargement, and emitter doping decrease have been verified and a p(+) plug modification approach for SEE hardening of power MOSFETs is validated with simulations on actual device structures.
引用
收藏
页码：1935 / 1939
页数：5
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