NUMERICAL-SIMULATION OF CHARGE COLLECTION IN TWO-DIMENSIONAL AND 3-DIMENSIONAL SILICON DIODES - A COMPARISON

被引：19

作者：

KRESKOVSKY, JP

GRUBIN, HL

机构：

[1] Scientific Research Associates Inc,, Glastonbury, CT, USA, Scientific Research Associates Inc, Glastonbury, CT, USA

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 05期

关键词：

SEMICONDUCTING SILICON - Charge Carriers;

D O I：

10.1016/0038-1101(86)90071-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charge collection transient following the strike of a silicon diode junction by an ionizing particle is computed in two and three dimensions for related device structures. The results of the computations are compared, and new physical interpretations of the results are discussed. The results indicate that although two and three dimensional simulations yield qualitatively similar behavior, accurate determination of the magnitude and duration of the current pulse and charge collection require three dimensional simulation. The study shows that, even for the simple structure considered, the device structure exerts an influence on the spreading of the disturbance, and this spreading is not, in general, axisymmetric.

引用

页码：505 / 518

页数：14