HIGH-ENERGY PHOTON-EMISSION IN GAAS-MESFETS AND ALGAAS/GAAS HEMTS

被引：1
作者：
ZANONI, E
TEDESCO, C
PACCAGNELLA, A
CANALI, C
BIGLIARDI, S
MANFREDI, M
机构：
[1] Dipartimento di Elettronica e Informatica, Universita' di Padova, 35131 Padova, Via Gradenigo
来源：
MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(91)90289-P
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a detailed investigation of hot carrier induced impact ionization and light emission in submicron GaAs MESFETs and AlGaAs/GaAs HEMTs demonstrating that emission of photons with hv > Eg is mainly caused by recombination between channel electrons and holes generated by impact ionization.
引用
收藏
页码：581 / 584
页数：4
相关论文
共 6 条
  • [1] Zanoni, Et al., Correlation between impact ionisation, recombination and visible light emission in GaAs MESFETs, El. Letters, 27, 9, pp. 770-772, (1991)
  • [2] Zanoni, Et al., Light emission in AlGaAs/GaAs HEMTs and GaAs MESFETs induced by hot carriers, IEEE El. Dev. Lett., 11, 11, pp. 487-489, (1990)
  • [3] Tsironis, Prebreakdown phenomena in GaAs epitaxial layers and FETs, IEEE Transactions on Electron Devices, 27, 1, pp. 277-282, (1980)
  • [4] Hui, Et al., Impact ionization in GaAs MESFETs, IEEE El. Dev. Lett., 11, 3, pp. 113-115, (1990)
  • [5] Aspnes, Table of optical function of intrinsic GaAs, EMIS Datareview RN=15437, (1985)
  • [6] Zappe, Moglestue, Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field effect transistors, Journal of Applied Physics, 68, 5, pp. 2501-2503
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