OPTICAL-TRANSITIONS ON GAAS [110] SURFACE

被引：60

作者：

BERKOVITS, VL

MAKARENKO, IV

MINASHVILI, TA

SAFAROV, VI

机构：

[1] Acad of Sciences of the USSR, A. F., Ioffe Physico-Technical Inst,, Leningrad, USSR, Acad of Sciences of the USSR, A. F. Ioffe Physico-Technical Inst, Leningrad, USSR

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 56卷 / 05期

关键词：

D O I：

10.1016/0038-1098(85)90030-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Modulation techniques have been employed in optical reflection measurements on GaAs (110) cleaved surface. Spectral bands at 2. 62 and 2. 83 ev observed for the light polarization E parallel (110) have been assigned to the surface state transitions. The E//1 and E//1 plus DELTA //1 bulk transitions were found to be sensitive to the surface conditions.

引用

页码：449 / 450

页数：2

共 7 条

[1] SCHOTTKY-BARRIER ELECTROREFLECTANCE-APPLICATION TO GAAS [J].

ASPNNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1973, 7 (10) :4605-4652

[2]

BERKOVITS VL, 1985, ZHETF PIS RED, V41, P453

[3]

Chiaradia P., 1980, Journal of the Physical Society of Japan, V49, P1109

[4] DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE [J].

CHIARADIA, P ;

CRICENTI, A ;

SELCI, S ;

CHIAROTTI, G .

PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1145-1147

[5] SEMICONDUCTOR SURFACE STRUCTURES [J].

Kahn, A. .

SURFACE SCIENCE REPORTS, 1983, 3 (4-5) :193-300

[6] SURFACE-STATES IN SI(111)2X1 AND GE(111)2X1 BY OPTICAL REFLECTIVITY [J].

NANNARONE, S ;

CHIARADIA, P ;

CICCACCI, F ;

MEMEO, R ;

SASSAROLI, P ;

SELCI, S ;

CHIAROTTI, G .

SOLID STATE COMMUNICATIONS, 1980, 33 (06) :593-595

[7] DIRECT MEASUREMENT OF THE POLARIZATION DEPENDENCE OF SI(111)2X1 SURFACE-STATE ABSORPTION BY USE OF PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY [J].

OLMSTEAD, MA ;

AMER, NM .

PHYSICAL REVIEW LETTERS, 1984, 52 (13) :1148-1151

← 1 →