METAL-GASE AND METAL-INP INTERFACES - SCHOTTKY-BARRIER FORMATION AND INTERFACIAL REACTIONS

被引：62
作者：
WILLIAMS, RH
MCKINLEY, A
HUGHES, GJ
MONTGOMERY, V
MCGOVERN, IT
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 02期
关键词：
D O I：
10.1116/1.571793
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：594 / 598
页数：5
相关论文
共 32 条
[1]   UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J].
ALLEN, RE ;
DOW, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :383-387
[2]  
ALLEN RE, 1982, J VAC SCI TECHNOL, V21
[3]   SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].
BARDEEN, J .
PHYSICAL REVIEW, 1947, 71 (10) :717-727
[4]   DISSOCIATIVE SURFACE-REACTIONS AT SCHOTTKY AND HETEROJUNCTION INTERFACES WITH ALAS AND GAAS [J].
BAUER, RS ;
BACHRACH, RZ ;
HANSSON, GV ;
CHIARADIA, P .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :674-680
[5]   ATOMIC AND ELECTRONIC-STRUCTURE OF INP-METAL INTERFACES - A PROTOTYPICAL III-V COMPOUND SEMICONDUCTOR [J].
BRILLSON, LJ ;
BRUCKER, CF ;
KATNANI, AD ;
STOFFEL, NG ;
MARGARITONDO, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :661-666
[6]  
BRILLSON LJ, 1978, J VAC SCI TECHNOL, V15, P1378, DOI 10.1116/1.569792
[7]   SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].
COWLEY, AM ;
SZE, SM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&
[8]   SURFACE VACANCIES IN INP AND GAAIAS [J].
DAW, MS ;
SMITH, DL .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :690-692
[9]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729
[10]   THEORY OF SURFACE STATES [J].
HEINE, V .
PHYSICAL REVIEW, 1965, 138 (6A) :1689-&
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