620 MW NEAR-DIFFRACTION-LIMITED, 1.8-MU-M TAPERED LASER

被引：2
作者：
MEHUYS, DG
MAJOR, JS
PLANO, WE
WELCH, DF
机构：
[1] SDL, Inc., San Jose, CA 95134-1356
来源：
ELECTRONICS LETTERS | 1994年 / 30卷 / 14期
关键词：
SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;
D O I：
10.1049/el:19940750
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A tapered laser emitting near 1.8mum wavelength is configured into a simple external cavity, and emits up to 1.44W under quasi-CW operation, of which 62OmW is in a near-diffraction-limited pattern.
引用
收藏
页码：1131 / 1133
页数：3
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