HETEROEPITAXIAL GROWTH OF CDTE ON GAAS BY LASER ASSISTED DEPOSITION

被引：62

作者：

CHEUNG, JT ^{[1
]}

KHOSHNEVISAN, M ^{[1
]}

MAGEE, T ^{[1
]}

机构：

[1] ADV RES & APPLICAT CORP, SUNNYVALE, CA 94086 USA

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 05期

关键词：

D O I：

10.1063/1.94389

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：462 / 464

页数：3

共 8 条

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[3]

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[6]

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[7] OPTICAL-PROPERTIES OF POLYCRYSTALLINE CDTE-FILMS [J].

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[8] GROWTH OF CDTE-FILMS ON SAPPHIRE BY MOLECULAR-BEAM EPITAXY [J].

MYERS, TH ;

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APPLIED PHYSICS LETTERS, 1983, 42 (03) :247-248

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