TEMPERATURE-DEPENDENCE OF CONDUCTIVITY OF SI-P NEAR THE METAL-INSULATOR-TRANSITION

被引：13

作者：

PHILLIPS, JC

机构：

[1] T Bell Laboratories, Murray Hill, NJ

来源：

EUROPHYSICS LETTERS | 1991年 / 14卷 / 04期

关键词：

D O I：

10.1209/0295-5075/14/4/014

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In the regimes T approximately less-than 0.1 K and 0 < (n - n(c))/n(c) approximately less-than 10-2 the conductivity DELTA-sigma(n, T) of Si: P is proportional to T1/2. Using quantum percolation theory I explain this behavior in terms of elementary fluctuation theory without appeal to electron-electron interactions.

引用

页码：367 / 370

页数：4

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