FORMATION OF CUXS FILMS THROUGH A CHEMICAL BATH DEPOSITION PROCESS

被引：74
作者：
GADAVE, KM
LOKHANDE, CD
机构：
来源：
THIN SOLID FILMS | 1993年 / 229卷 / 01期
关键词：
D O I：
10.1016/0040-6090(93)90397-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A method for the preparation of Cu(x)S thin films through chemical bath deposition from a thiosulphate acidic bath is described. From optical absorption studies, the band gap of Cu(x)S is estimated to be 2.40 eV. The electrical resistivity was of the order of 10(-4) OMEGA CM. IR and SEM studies were carried out.
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页码：1 / 4
页数：4
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