NEW TECHNIQUE FOR FABRICATION OF SCHOTTKY-BARRIER DIODES

被引：0

作者：

STAREEV, GD ^{[1
]}

PISKORSKI, MM ^{[1
]}

机构：

[1] SCI & PROD CTR SEMICOND,INST ELECTR TECHNOL,PL-02668 WARSAW,POLAND

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 02期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：161 / 163

页数：3

共 13 条

[1] PLANAR ISOLATED GAAS DEVICES PRODUCED BY MOLECULAR-BEAM EPITAXY [J].

BALLAMY, WC ;

CHO, AY .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (04) :481-484

[2]

GALGINAITIS SV, 1970, 3RD P INT S GALL ARS, P80

[3]

IIDA S, 1972, J CRYST GROWTH, V13, P336

[4] LOW-NOISE GAAS SCHOTTKY-BARRIER BEAM-LEAD MIXER DIODES [J].

IIZUKA, H ;

KITAOKA, S .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (09) :1372-&

[5]

ISHIBASHI Y, 1970, JAP J APPL PHYS, V8, P1007

[6] GAAS INTEGRATED MICROWAVE CIRCUITS [J].

MEHAL, EW ;

WACKER, RW .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (02) :113-&

[7] SELECTIVE EPITAXIAL-GROWTH OF GAAS FROM LIQUID-PHASE [J].

PISKORSKI, MM ;

STAREEV, GD .

SOLID-STATE ELECTRONICS, 1975, 18 (10) :859-&

[8] PLANAR MILLIMETER-WAVE EPITAXIAL SILICON SCHOTTKY-BARRIER CONVERTER DIODES [J].

RUSCH, WVT ;

BURRUS, CA .

SOLID-STATE ELECTRONICS, 1968, 11 (05) :517-&

[9] SELECTIVE EPITAXIAL DEPOSITION OF GALLIUM ARSENIDE IN HOLES [J].

SHAW, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (09) :904-&

[10] EFFECTS OF VAPOR COMPOSITION ON GROWTH RATES OF FACETED GALLIUM ARSENIDE HOLE DEPOSITS [J].

SHAW, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (07) :777-&

← 1 2 →