ELECTRICAL CHARACTERISTICS OF A LATTICE-MATCHED IN0.53AL0.22GA0.25AS/INP HETEROJUNCTION BIPOLAR-TRANSISTOR WITH ZERO POTENTIAL SPIKE AT EMITTER-BASE HETEROJUNCTION

被引：3
作者：
WU, YH
SU, JS
HSU, WC
LIN, W
LIU, WC
机构：
[1] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN 70101,TAIWAN
[2] MINIST TRANSPORTAT & COMMUN,TELECOMMUN LAB,SECT 3,TAYUAN,TAIWAN
来源：
SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 10期
关键词：
D O I：
10.1016/0038-1101(94)00300-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report qualitatively a lattice-matched In0.53Al0.22Ga0.25As/InP heterojunction bipolar transistor grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). the In0.53Al0.22Ga0.25As/InP heterostructure has a large valence band discontinuity and a zero conduction band discontinuity which are suitable for the HBTs. A common-emitter current gain of 85 along with a low offset voltage 50 mV are obtained. The junction ideality factors of collector and base current are 1.18 and 1.35, respectively. The current gain (h(FE)) slightly increases with the increase of collector current.
引用
收藏
页码：1755 / 1757
页数：3
相关论文
共 9 条
[1]  
BOHRER J, 1993, APPL PHYS LETT, V63, P1918, DOI 10.1063/1.110648
[2]   HIGH-SPEED INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
CHAU, HF ;
BEAM, EA .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (08) :388-390
[3]   ORIGIN OF HIGH OFFSET VOLTAGE IN AN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].
LEE, SC ;
KAU, JN ;
LIN, HH .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1114-1116
[4]   SUPER-GAIN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS USING AN EMITTER EDGE-THINNING DESIGN [J].
LIN, HH ;
LEE, SC .
APPLIED PHYSICS LETTERS, 1985, 47 (08) :839-841
[5]   THEORETICAL COMPARISON OF BASE BULK RECOMBINATION CURRENT AND SURFACE RECOMBINATION CURRENT OF A MESA ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].
LIU, WU ;
COSTA, D ;
HARRIS, JS .
SOLID-STATE ELECTRONICS, 1991, 34 (10) :1119-1123
[6]   HIGH-CURRENT-GAIN GA-0.51IN-0.49P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].
LU, SS ;
HUANG, CC .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (04) :214-216
[7]  
LUO LF, 1989, IEEE T ELECTRON DEV, V36, P1845
[8]  
NOTTENBURG RN, 1986, IEEE ELECTRON DEVICE, V6, P643
[9]   COLLECTOR OFFSET VOLTAGE OF HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].
WON, T ;
IYER, S ;
AGARWALA, S ;
MORKOC, H .
IEEE ELECTRON DEVICE LETTERS, 1989, 10 (06) :274-276
1