GROWTH OF A ZNSE-ZNTE STRAINED-LAYER SUPERLATTICE ON AN INP SUBSTRATE BY MOLECULAR-BEAM EPITAXY

被引：51

作者：

KOBAYASHI, M

MINO, N

KATAGIRI, H

KIMURA, R

KONAGAI, M

TAKAHASHI, K

机构：

[1] Tokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, Jpn

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 04期

关键词：

MOLECULAR BEAM EPITAXY - PHOTOLUMINESCENCE - SEMICONDUCTING INDIUM COMPOUNDS - Substrates - X-RAYS - Diffraction;

D O I：

10.1063/1.96585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A ZnSe-ZnTe strained-layer superlattice (SLS) was grown on an InP substrate by molecular beam epitaxy for the first time. The x-ray diffraction measurement technique was used to confirm the existence of the high quality SLS structure. Overall quality may also be inferred from the observed quantum size effects of the photoluminescence data.

引用

页码：296 / 297

页数：2

共 6 条

[1] SMOOTH AND COHERENT LAYERS OF GAAS AND ALAS GROWN BY MOLECULAR-BEAM EPITAXY [J].