CHEMICAL-DEPOSITION OF TIO2 LAYERS ON GAAS

被引:17
作者
BERTRAND, PA
FLEISCHAUER, PD
机构
关键词
D O I
10.1016/0040-6090(83)90433-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:167 / 175
页数:9
相关论文
共 14 条
[1]  
AHRENKIEL RK, 1982, 9TH ANN PHYS CHEM SE
[2]   XPS STUDY OF CHEMICALLY ETCHED GAAS AND INP [J].
BERTRAND, PA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (01) :28-33
[3]  
CLARK MD, 1982, 9TH ANN PHYS CHEM SE
[4]   EFFECTS OF WATER-VAPOR AND OXYGEN EXCITATION ON OXIDATION OF GAAS, GAP AND INSB SURFACES STUDIED BY X-RAY PHOTOEMISSION SPECTROSCOPY [J].
IWASAKI, H ;
MIZOKAWA, Y ;
NISHITANI, R ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (08) :1525-1529
[5]   X-RAY PHOTOEMISSION STUDY OF INTERACTION OF OXYGEN AND AIR WITH CLEAVED GAAS (110) SURFACES [J].
IWASAKI, H ;
MIZOKAWA, Y ;
NISHITANI, R ;
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (02) :315-320
[6]  
IWASAKI H, 1978, JPN J APPL PHYS, V17, P1923
[7]   CHARACTERIZATION OF IMPROVED INSB INTERFACES [J].
LANGAN, JD ;
VISWANATHAN, CR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1474-1477
[8]   ESCA STUDIES OF GA, AS, GAAS, GA2O3, AS2O3 AND AS2O5 [J].
MIZOKAWA, Y ;
IWASAKI, H ;
NISHITANI, R ;
NAKAMURA, S .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1978, 14 (02) :129-141
[9]   IMPROVED INTERFACE IN INVERSION-TYPE INP-MISFET BY VAPOR ETCHING TECHNIQUE [J].
OKAMURA, M ;
KOBAYASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2151-2156
[10]   SLOW CURRENT-DRIFT MECHANISM IN N-CHANNEL INVERSION TYPE INP-MISFET [J].
OKAMURA, M ;
KOBAYASHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (11) :2143-2150