EFFECT OF NEUTRAL SCATTERERS ON ELECTRON-MOBILITY IN SILICON (100) INVERSION-LAYERS

被引：3

作者：

NACHEV, I

VELCHEV, N

机构：

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1984年 / 55卷 / 01期

关键词：

D O I：

10.1007/BF01307498

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：33 / 39

页数：7

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