CHEMICAL HETEROGENEITY IN OFF STOICHIOMETRY A-SIXNYHZ FROM A COLLECTIVE VIBRATIONAL-MODES STUDY

被引:18
作者
CHAUSSAT, C
BUSTARRET, E
DENEUVILLE, A
机构
关键词
D O I
10.1016/0022-3093(85)90810-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:917 / 920
页数:4
相关论文
共 7 条
[1]   INFLUENCE OF STOICHIOMETRY AND HYDROGEN-BONDING ON THE INSULATING PROPERTIES OF PECVD SILICON-NITRIDE [J].
CHAUSSAT, C ;
BUSTARRET, E ;
BRUYERE, JC ;
GROLEAU, R .
PHYSICA B & C, 1985, 129 (1-3) :215-219
[2]   THE STRUCTURE OF PLASMA-DEPOSITED SILICON-NITRIDE FILMS DETERMINED BY INFRARED-SPECTROSCOPY [J].
KNOLLE, WR ;
OSENBACH, JW .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :1248-1254
[3]   WIDE OPTICAL-GAP, PHOTOCONDUCTIVE A-SIXN1-X-H [J].
KURATA, H ;
HIROSE, M ;
OSAKA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L811-L813
[4]   NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS [J].
LUCOVSKY, G ;
YANG, J ;
CHAO, SS ;
TYLER, JE ;
CZUBATYJ, W .
PHYSICAL REVIEW B, 1983, 28 (06) :3234-3240
[5]   ANNEALING AND CRYSTALLIZATION PROCESSES IN TETRAHEDRALLY BONDED BINARY AMORPHOUS-SEMICONDUCTORS [J].
MORIMOTO, A ;
KATAOKA, T ;
KUMEDA, M ;
SHIMIZU, T .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 50 (04) :517-537
[6]   VIBRATIONAL ABSORPTION-BANDS FOR IMPLANTED NITROGEN IN CRYSTALLINE SILICON [J].
STEIN, HJ .
APPLIED PHYSICS LETTERS, 1983, 43 (03) :296-298
[7]   RAMAN AND IR ABSORPTION SPECTROSCOPIC STUDIES ON ALPHA,BETA, AND AMORPHOUS SI3N4 [J].
WADA, N ;
SOLIN, SA ;
WONG, J ;
PROCHAZKA, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1981, 43 (01) :7-15