NEED FOR AN ACCEPTOR LEVEL IN THE ASGA-ASI MODEL FOR EL2

被引：17

作者：

BARAFF, GA

SCHLUTER, M

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.35.5929

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5929 / 5932

页数：4

共 10 条

[1] ASGA ANTISITE DEFECT IN GAAS [J].

BACHELET, GB ;

SCHLUTER, M ;

BARAFF, GA .

PHYSICAL REVIEW B, 1983, 27 (04) :2545-2547

[2] MIGRATION OF INTERSTITIALS IN SILICON [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1984, 30 (06) :3460-3469

[3] BINDING AND FORMATION ENERGIES OF NATIVE DEFECT PAIRS IN GAAS [J].

BARAFF, GA ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1986, 33 (10) :7346-7348

[4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[5] INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS [J].

KAMINSKA, M ;

SKOWRONSKI, M ;

LAGOWSKI, J ;

PARSEY, JM ;

GATOS, HC .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :302-304

[6]

MARTIN GM, 1985, DEEP CTR SEMICONDUCT, P399

[7]

SAMUELSON L, 1986, UNPUB 18TH P INT C P

[8]

SPAETH JM, 1986, 4TH P INT C SEM 3 4

[9] IDENTIFICATION OF EL2 IN GAAS [J].

VONBARDELEBEN, HJ ;

STIEVENARD, D ;

BOURGOIN, JC ;

HUBER, A .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :970-972

[10] ASGA ANTISITE DEFECTS IN GAAS [J].

WEBER, ER ;

SCHNEIDER, J .

PHYSICA B & C, 1983, 116 (1-3) :398-403

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