NUCLEATION OF PRECIPITATE COLONIES FROM SWIRL DEFECTS IN SILICON

被引：6

作者：

NES, E ^{[1
]}

机构：

[1] CENT INST IND RES, OSLO, NORWAY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1976年 / 33卷 / 01期

关键词：

D O I：

10.1002/pssa.2210330149

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K5 / +

页数：1

共 10 条

[1] TEM OBSERVATION OF DISLOCATION LOOPS CORRELATED WITH INDIVIDUAL SWIRL DEFECTS IN AS-GROWN SILICON [J].

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MAYER, KR ;

SCHUH, GE .

APPLIED PHYSICS LETTERS, 1974, 25 (05) :277-279

[2] NATURE OF SWIRLS AND ITS SIGNIFICANCE FOR UNDERSTANDING POINT-DEFECTS IN SILICON [J].

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KOLBESEN, BO ;

FRANK, W .

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[3]

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[4]

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[5] VACANCY CLUSTERS IN DISLOCATION-FREE SILICON [J].

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[6] MECHANISM OF REPEATED PRECIPITATION ON DISLOCATIONS [J].

NES, E .

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[7] PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS [J].

NES, E ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3562-&

[8] TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION OF GROWTH OF COPPER PRECIPITATE COLONIES IN SILICON [J].

NES, E ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) :3682-3688

[9] RADIATION-INDUCED PRECIPITATION IN SILICON DURING HIGH-VOLTAGE ELECTRON MICROSCOPE OBSERVATION [J].

NES, E ;

WASHBURN, J .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3559-&

[10] In honour of Prof. Dr. Dr. h. c. Alfred Seeger - on the occasion of his 80th birthday [J].

Stutzmarm, Martin .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (09) :3024-3026

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