2/3-INCH FORMAT MOS SINGLE-CHIP COLOR IMAGER

被引:27
作者
AOKI, M
ANDO, H
OHBA, S
TAKEMOTO, I
NAGAHARA, S
NAKANO, T
KUBO, M
FUJITA, T
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
[2] HITACHI LTD,MOBARA WORKS,CHIBA 297,JAPAN
关键词
D O I
10.1109/T-ED.1982.20772
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:745 / 750
页数:6
相关论文
共 14 条
[1]  
AOKI M, 1980, ISSCC, P26
[2]  
CARNES JE, 1972, RCA REV, V33, P327
[3]   DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
YU, HN ;
RIDEOUT, VL ;
BASSOUS, E ;
LEBLANC, AR .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268
[4]   FABRICATION AND PERFORMANCE OF COLOR FILTER ARRAYS FOR SOLID-STATE IMAGERS [J].
DILLON, PLP ;
BRAULT, AT ;
HORAK, JR ;
GARCIA, E ;
MARTIN, TW ;
LIGHT, WA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :97-101
[5]   COLOR IMAGING-SYSTEM USING A SINGLE CCD AREA ARRAY [J].
DILLON, PLP ;
LEWIS, DM ;
KASPAR, FG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) :102-107
[6]   NOISE GENERATED IN SWITCHED CAPACITOR NETWORKS [J].
GOBET, CA ;
KNOB, A .
ELECTRONICS LETTERS, 1980, 16 (19) :734-735
[7]  
HARRIS WA, 1941, RCA REV, V5, P505
[8]  
ISHIHARA Y, 1980, IEEE INT SOLID STATE, P24
[9]  
JAMES I, 1952, P IEE 3A, V99, P796
[10]   MOS AREA SENSOR .1. DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484X384 ELEMENT COLOR MOS IMAGER [J].
KOIKE, N ;
TAKEMOTO, I ;
SATOH, K ;
HANAMURA, S ;
NAGAHARA, S ;
KUBO, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1676-1681