IMPROVED PERFORMANCE OF IMPATT DIODES FABRICATED FROM GE

被引：21
作者：
RULISON, RL
GIBBONS, G
JOSENHANS, JG
机构：
来源：
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1967年 / 55卷 / 02期
关键词：
D O I：
10.1109/PROC.1967.5449
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：223 / +
页数：1
相关论文
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