RAPID THERMAL AND PULSED LASER ANNEALING OF BORON FLUORIDE-IMPLANTED SILICON

[11] Narayan J., 1984, Materials Letters, V2, P211, DOI 10.1016/0167-577X(84)90026-0

[12] NARAYAN J, 1983, LASER SOLID INTERACT

[13] INVESTIGATION OF FLUORINE-CONCENTRATION PROFILES IN PULSED-LASER-IRRADIATED BF2+-IMPLANTED SILICON SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 366 - 368

[14] OLSEN G, ADV SOLID STATE TECH

[15] POINT-DEFECT TRAPPING IN SOLID-PHASE EPITAXIALLY GROWN SILICON-ANTIMONY ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 837 - 840

[16] SHORT-TIME ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 484 - 493

[17] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 144 - 147

[18] TSAUR BY, 1981, APPL PHYS LETT, V39, P94

[11] Narayan J., 1984, Materials Letters, V2, P211, DOI 10.1016/0167-577X(84)90026-0

[12] NARAYAN J, 1983, LASER SOLID INTERACT

[13] INVESTIGATION OF FLUORINE-CONCENTRATION PROFILES IN PULSED-LASER-IRRADIATED BF2+-IMPLANTED SILICON SINGLE-CRYSTALS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 366 - 368

[14] OLSEN G, ADV SOLID STATE TECH

[15] POINT-DEFECT TRAPPING IN SOLID-PHASE EPITAXIALLY GROWN SILICON-ANTIMONY ALLOYS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 837 - 840

[16] SHORT-TIME ANNEALING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) : 484 - 493

[17] ANOMALOUS MIGRATION OF FLUORINE AND ELECTRICAL ACTIVATION OF BORON IN BF-2+-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 32 (03) : 144 - 147

[18] TSAUR BY, 1981, APPL PHYS LETT, V39, P94