CHROMIUM ABSORPTION IN INP

被引：16

作者：

CLERJAUD, B ^{[1
]}

NAUD, C ^{[1
]}

PICOLI, G ^{[1
]}

TOUDIC, Y ^{[1
]}

机构：

[1] CNET LAB,ICM,F-22301 LANNION,FRANCE

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 35期

关键词：

D O I：

10.1088/0022-3719/17/35/016

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：6469 / 6476

页数：8

共 18 条

[1] COMPARISON OF STATIC AND DYNAMIC JAHN-TELLER MODELS FOR CR-2+-GAAS [J].

ABHVANI, AS ;

BATES, CA ;

POOLER, DR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (10) :1713-1716

[2] INTERPRETATION OF THE ZERO-PHONON OPTICAL-ABSORPTION LINES ASSOCIATED WITH SUBSTITUTIONAL CR2+-GAAS [J].

ABHVANI, AS ;

BATES, CA ;

CLERJAUD, B ;

POOLER, DR .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (06) :1345-1351

[3]

BARRAU J, 1982, PHYSICA B, V116, P456

[4]

BREMOND G, 1982, I PHYS C SERIES, V63, P239

[5] CR2+(3D4) ABSORPTION IN GAAS [J].

CLERJAUD, B ;

HENNEL, AM ;

MARTINEZ, G .

SOLID STATE COMMUNICATIONS, 1980, 33 (09) :983-985

[6] SYNTHESIS, CRYSTAL-GROWTH AND CHARACTERIZATION OF INP [J].

COQUILLE, R ;

TOUDIC, Y ;

GAUNEAU, M ;

GRANDPIERRE, G ;

PARIS, JC .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :23-31

[7] LUMINESCENCE PROCESSES AT CHROMIUM IN GAAS [J].

DEVEAUD, B ;

PICOLI, G ;

LAMBERT, B ;

MARTINEZ, G .

PHYSICAL REVIEW B, 1984, 29 (10) :5749-5763

[8]

Eaves L., 1980, Semi-Insulating III-V Materials, P145

[9] STUDIES OF DEEP CHROMIUM ACCEPTOR LEVELS IN INP [J].

FUNG, S ;

NICHOLAS, RJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (15) :2135-2146

[10]

Fung S., 1980, Semi-Insulating III-V Materials, P154

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