MICROSTRUCTURES OF CO/CR BILAYER FILMS EPITAXIALLY GROWN ON MGO SINGLE-CRYSTAL SUBSTRATES

被引：34

作者：

NAKAMURA, A

KOGUCHI, M

FUTAMOTO, M

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 5A期

关键词：

CO; CR; MGO; EPITAXIAL GROWTH; BICRYSTAL; SINGLE-CRYSTAL; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC RECORDING MEDIA;

D O I：

10.1143/JJAP.34.2307

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microstructures of Co/Cr bilayer films epitaxially grown on MgO (100) and (110) single-crystal substrates have been studied by high-resolution transmission electron microscopy. The bicrystalline Co layer formed on the MgO (100) substrate contains a number of (0001) stacking faults. The single-crystal Co layer formed on the MgO (110) substrate consists of slightly misoriented subgrains, grown on (211)-oriented Cr domains. Dislocations and lattice strain are observed at the Cr/MgO (110) interface. The misorientations and the defects are thought to be introduced to accommodate the large lattice mismatch of about -16% in the MgO [$($) over bar$$ 110] direction at the Cr/MgO (110) interface.

引用

页码：2307 / 2311

页数：5

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