LOW-VOLTAGE INGAAS/INP MULTIPLE QUANTUM-WELL REFLECTIVE FABRY-PEROT MODULATOR

被引：26
作者：
MOSELEY, AJ
THOMPSON, J
KEARLEY, MQ
ROBBINS, DJ
GOODWIN, MJ
机构：
[1] Plessey Research Caswell, Caswell, Towcester
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 13期
关键词：
materials; Modulation; Semiconductor devices;
D O I：
10.1049/el:19900597
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first low voltage, substrate access, reflective InGaAs/lnP multi-quantum well modulator exploiting the enhanced performance obtainable through the use of an asymmetric Fabry-Perot cavity around the quantum well absorbing region is reported. This device utilises a low reflectivity AlInGaAs/InP multi-layer mirror (R ~ 35%) on the substrate side of the quantum well region, and a high reflectivity metal mirror (R ~ 95%) on the epitaxial side of the cavity. Devices have been fabricated which exhibit a reflectivity change of > 30% and contrast ratio of 3 dB at 5 V bias, with a 1.8 dB insertion loss. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：913 / 915
页数：3
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