HETEROEPITAXIAL GROWTH OF GAP FILMS ON SI SUBSTRATES

被引：38

作者：

POGGE, HB ^{[1
]}

KEMLAGE, BM ^{[1
]}

BROADIE, RW ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF CRYSTAL GROWTH | 1977年 / 37卷 / 01期

关键词：

D O I：

10.1016/0022-0248(77)90138-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：13 / 22

页数：10

共 31 条

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[2] HETEROEPITAXIAL GROWTH OF GAP ON SILICON [J].

ANDRE, JP ;

HALLAIS, J ;

SCHILLER, C .

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[3]

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[4]

ASHEN D, 1974, 5TH INT S GAAS DEAUV

[5]

CRAFORD MG, 1970, J APPL PHYS, V42

[6] SYNTHESIS AND EPITAXIAL GROWTH OF GAP BY FUSED SALT ELECTROLYSIS [J].

CUOMO, JJ ;

GAMBINO, RJ .

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[7] FORMATION OF STACKING-FAULTS AND ENHANCED DIFFUSION IN OXIDATION OF SILICON [J].

HU, SM .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1567-1573

[8]

Huber H., 1973, Siemens Forschungs- und Entwicklungsberichte, V2, P171

[9] SELECTIVE GROWTH OF HETEROEPITAXIAL GAP ON SI SUBSTRATES [J].

IGARASHI, O .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) :1430-&

[10] HETEROEPITAXIAL GROWTH OF GAP ON SI SUBSTRATES BY EVAPORATION METHOD [J].

IGARASHI, O .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3190-&

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