PHONON-ASSISTED AUGER RECOMBINATION IN GERMANIUM

被引:32
作者
HULDT, L [1 ]
机构
[1] ROY INST TECHNOL,DEPT PHYS 3,STOCKHOLM,SWEDEN
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 33卷 / 02期
关键词
D O I
10.1002/pssa.2210330220
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:607 / 614
页数:8
相关论文
共 24 条
[1]   OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].
ANTONCIK, E ;
LANDSBERG, PT .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527) :337-&
[2]   AUGER EFFECT IN SEMICONDUCTORS [J].
BEATTIE, AR ;
LANDSBERG, PT .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29
[3]   AUGER-RECOMBINATION IN SI [J].
BECK, JD ;
CONRADT, R .
SOLID STATE COMMUNICATIONS, 1973, 13 (01) :93-95
[4]   MINORITY CARRIER LIFETIME IN HIGHLY DOPED GE [J].
CONRADT, R ;
AENGENHEISTER, J .
SOLID STATE COMMUNICATIONS, 1972, 10 (03) :321-+
[5]   INDIRECT BAND TO BAND AUGER-RECOMBINATION IN GERMANIUM [J].
CONRADT, R .
ZEITSCHRIFT FUR PHYSIK, 1968, 209 (05) :445-&
[6]  
CONRADT R, 1972, FESTKORPERPROBLEME, V12, P449
[7]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J].
DASH, WC ;
NEWMAN, R .
PHYSICAL REVIEW, 1955, 99 (04) :1151-1155
[8]   PHONON-ASSISTED AUGER EFFECT IN SEMICONDUCTORS [J].
EAGLES, DM .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (500) :204-&
[9]  
HARBEKE G, 1964, Z NATURFORSCH PT A, VA 19, P548
[10]   INFLUENCE OF SCREENING EFFECTS ON AUGER RECOMBINATION IN SEMICONDUCTORS [J].
HAUG, A ;
EKARDT, W .
SOLID STATE COMMUNICATIONS, 1975, 17 (03) :267-268