ELECTRICAL TRANSPORT-PROPERTIES OF CDSE THIN-FILM TRANSISTORS WITH CR CONTACTS

被引：1

作者：

WAECHTER, D ^{[1
]}

LEITH, G ^{[1
]}

ZUKOTYNSKI, S ^{[1
]}

机构：

[1] UNIV TORONTO,DEPT ELECT ENGN,TORONTO M5S 1A7,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1991年 / 69卷 / 3-4期

关键词：

D O I：

10.1139/p91-038

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrical transport properties of CdSe thin-film transistors have been examined as a function of lateral distance from Cr contacts. The results show that the channel conductivity is enhanced in the vicinity of the contacts and drops sharply at a critical distance. The magnitude of this distance is sensitive to the surface treatment prior to CdSe deposition. Hall-effect measurements show an increasing electron mobility with increasing gate voltage, consistent with gate-voltage-induced lowering of grain-boundary potential barriers.

引用

页码：229 / 235

页数：7

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