ALUMINUM-SILICON SCHOTTKY BARRIERS AND OHMIC CONTACTS IN INTEGRATED-CIRCUITS

被引：138
作者：
CARD, HC [1 ]
机构：
[1] COLUMBIA UNIV,DEPT ELECT ENGN & COMP SCI,NEW YORK,NY 10027
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 06期
关键词：
D O I：
10.1109/T-ED.1976.18449
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：538 / 544
页数：7
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