THE USE OF AN ELECTRODE POTENTIAL IN THE INVESTIGATION OF A SINGLE-CRYSTAL SEMICONDUCTOR MATRIX .2. ANISOTROPY OF SURFACE DAMAGES IN SILICON SINGLE-CRYSTAL CUTTING

被引：0
|
作者：
GULIDOV, DN
AIDELMAN, BL
CHARLAMOV, VY
CHISTYAKOV, YD
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1986年 / 21卷 / 08期
关键词：
D O I：
10.1002/crat.2170210828
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
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页码：1115 / 1120
页数：6
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