OBSERVATION OF POINT-DEFECTS IN ZNSE USING THE POSITRON-ANNIHILATION METHOD

被引：4

作者：

MIYAJIMA, T ^{[1
]}

OKUYAMA, H ^{[1
]}

AKIMOTO, K ^{[1
]}

MORI, Y ^{[1
]}

WEI, L ^{[1
]}

TANIGAWA, S ^{[1
]}

机构：

[1] UNIV TSUKUBA, INST MAT SCI, TSUKUBA, IBARAKI 305, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90838-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied point defects in ZnSe films grown by molecular beam epitaxy using the positron annihilation method. We found that doping with Ga atoms induces vacancy type defects such as Zn-vacancies, and that a heavy doping with oxygen atoms induces interstitial type defects in ZnSe films. We think that these defects are one of the causes of active carrier saturation in doped ZnSe films.

引用

页码：694 / 697

页数：4

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