ETCHING OF INDIUM TIN OXIDE IN METHANE/HYDROGEN PLASMAS

被引：28

作者：

ADESIDA, I

BALLEGEER, DG

SEO, JW

KETTERSON, A

CHANG, H

CHENG, KY

GESSERT, T

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

[2] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 06期

关键词：

D O I：

10.1116/1.585843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reactive ion etching of the transparent conductor, indium tin oxide (ITO), in methane/hydrogen plasmas has been characterized. It is shown that ITO can be selectively etched on GaAs and AlGaAs. Anisotropic structures and gratings with submicrometer dimensions in ITO are presented. Application of the etching process to the fabrication of highly sensitive metal-semiconductor-metal (MSM) photodetectors with interdigitated ITO fingers is demonstrated.

引用

页码：3551 / 3554

页数：4

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